High Breakdown Voltage Analysis of DIMOSFET with Linear Doping Profile in the Drift Region for 3C-SiC Wafer

Parag parashar

Abstract


The aim of the present work is to analyse 3C-SiC Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET) with linearly graded doping profile in the drift region for high breakdown voltages. By varying the device height ‘h’ and concentration gradient ‘a’ various calculations have been made for optimum profiles with high breakdown voltages. When the device height is set at 300 µm, a maximum breakdown voltage of 280 kV has been estimated with concentration gradient ‘a’ as 66.6 * 10^16 cm^-4 and drain end doping concentration as 2*10^16 /cc. Wolfram Mathematica and Matlab have been used for various equation solving and plotting purposes.

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References


M. Vashishath, and A.K. Chatterjee, “Theoretical analysis and Design of double implanted MOSFET on 6H silicon carbide wafer for low power dissipation and large breakdown voltageâ€, Mj. Int. J. Sci. Tech., 2 (02), 2008, pp. 308-319.

M. Bhatnagar, and B.J. Baliga, “Comparison of 6H-SiC, 3C-SiC, and Si for Power Devicesâ€, IEEE Transactions on Electron Devices, 40 (3), 1993.

E.K. Polychroniadis, A. Andreadou, and A. Mantzari, “Some recent progress in 3C-SiC growth-A TEM characterizationâ€, Journal of Optoelectronics and Advanced Materials, 6 (1), 2004, pp. 47–52.

P. Rani, “ Analysis of breakdown voltages and depletion region width of 3C-SiC vertical double implanted MOSFET using complementary doping profile in drift regionâ€, Master’s Thesis, Thapar University, Patiala, 2009.

J. Eid, and I.G. Galben, “3C-SiC growth on Si via CVD: An introduction “Some recent progress in 3C-SiC growth-A TEMâ€, Physics of Advanced Materials Winter School, 2008.

R. Talwaar, and A.K. Chatterjee, “Estimation of Power Dissipation and Breakdown Voltages of a 4H-SiC Schottky Barrier Diode for a Linearly Graded and Uniformly Doped Drift Regionâ€, Journal of Electron Devices, 7, 2010, pp. 257-262.




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