SiO2 and TiO2 Thin Films

A study on laser induced damage threshold of SiO2 and TiO2 Thin Films

Sunil Kumar, Kamal Sindhu, Ajay Shankar, Nawal Kishore


Laser induced damage threshold of SiO2 and TiO2 thin films prepared by e-beam evaporation technique on BK7 glass substrate at normal without  heating. TiO2 and SiO2 deposited by such method were annealed in air for an hour at temperature of 2500C. X- ray diffraction of these samples shows the amorphous behavior of the SiO2 and TiO2 films. Using spectrophotometer standardization for quarter wave optical thickness (QWOT) were calculated reflectivity of TiO2, at quarter wave optical thickness confirms its reflective behavior while that of SiO2 film confirms  anti-reflective behaviors. Simulation of above film design performed with OpenFilter software. Electric field intensity and reflectivity are characterized with this software. Simulation results show that standing wave electric field is higher in TiO2 as compare to SiO2 film and thus due to this higher electric field damage thresholds of TiO2will be lower than the SiO2 films.


Quarter wave optical thickness con(QWOT), Reflectivity, E-beam evaporation, Simulation, Amorphous.

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